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 2SK3176
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS V)
2SK3176
Switching Regulator, DC-DC Converter and Motor Drive Applications
* * * * Low drain-source ON resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 mA (max) (VDS = 200 V) Enhancement-mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 200 200 20 30 120 150 925 30 15 150 -55 to 150 Unit V V V A W mJ A mJ C C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
Pulse (Note 1) (Tc = 25C)
Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA Weight: 4.6 g (typ.)
SC-65 2-16C1B
Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 50 V, Tch = 25C (initial), L = 1.66 mH, RG = 25 , IAR = 30 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature. Note 4: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution.
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50.0 Unit C/W C/W
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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton Test Condition VGS = 16 V, VDS = 0 V VDS = 200 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 15 A VDS = 10 V, ID = 15 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 1 MHz 10 V VGS 0V 4.7 ID = 15 A RL = 6.7 VOUT Min 200 1.5 15 Typ. 38 30 5400 580 1900 15 55 25 190 125 80 45 Max 10 100 3.5 52 ns nC nC nC Unit A A V V m S pF pF pF
VDD 100 V - Duty 1%, tw = 10 s VDD 160 V, VGS = 10 V, ID = 30 A - VDD 160 V, VGS = 10 V, ID = 30 A - VDD 160 V, VGS = 10 V, ID = 30 A -
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 30 A, VGS = 0 V IDR = 30 A, VGS = 0 V, dIDR/dt = 100 A/s IDR = 30 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 270 3.0 Max 30 90 -2.0 Unit A A V ns C
Marking
TOSHIBA
Note 5: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Product No. (or abbreviation code) Lot No.
K3176
Note 5
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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ID - VDS
20 10 16 8 6 4 50 15 10 4.8 6 5
ID - VDS
4.6 4.4 Common source Tc = 25C Pulse test
Drain current ID (A)
Drain current ID (A)
15 12
5
Common source Tc = 25C Pulse test 3.8
40 8
30
4.2
8
3.6
20
4 3.8
4
VGS = 3.4 V
10
VGS = 3.6 V
0 0
0.4
0.8
1.2
1.6
2.0
0 0
4
8
12
16
20
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID - VGS
50 Common source VDS = 10 V Pulse test 5
VDS - VGS
Common source Tc = 25C Pulse test
40
VDS (V) Drain-source voltage
4
Drain current ID (A)
30
3
20 25 10 100 0 0 Tc = -55C
2 ID = 30 A 1 15 7.5
2
4
6
8
10
0 0
4
8
12
16
20
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
|Yfs| - ID
100 Common source VDS = 10 V Pulse test Tc = -55C 10 5 3 25
RDS (ON) - ID
0.5 0.3 Common source Tc = 25C Pulse test
Forward transfer admittance |Yfs| (S)
30 100
Drain-source ON resistance RDS ()
50
0.1
0.05 0.03
VGS = 10 V 15
1 0.3 0.5
1
3
5
10
30
50
100
0.01 1
3
5
10
30
50
100
Drain current ID (A)
Drain current ID (A)
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2SK3176
RDS (ON) - Tc
0.10 Common source VGS = 10 V Pulse test 100 ID = 30 A 15 7.5 0.06 50 30 Common source Tc = 25C Pulse test
IDR - VDS
Drain-source ON resistance RDS (ON) ()
0.08
Drain reverse current IDR
(A)
10 10 5
0.04
5 3
0.02
3 VGS = 0 V
0 -80
-40
0
40
80
120
160
1 0
0.4
0.8
1.2
1.6
2.0
Case temperature Tc
(C)
Drain-source voltage
VDS (V)
Capacitance - VDS
5 10000 Ciss
Vth - Tc
Common source VDS = 10 V ID = 1 mA Pulse test
Vth (V) Gate threshold voltage
4
(pF)
3000
Capacitance C
3
1000 Coss 300 Common source VGS = 0 V f = 1 MHz Tc = 25C 0.3 1 3 10 30 Crss
2
1
100
30 0.1
100
0 -80
-40
0
40
80
120
160
Drain-source voltage
VDS (V)
Case temperature Tc
(C)
PD - Tc
250 200
Dynamic Input/Output Characteristics
20 Common source ID = 30 A Tc = 25C Pulse test 15 80 VDD = 40 V 100 160
Drain power dissipation PD (W)
VDS (V)
200
VDS 150
Drain-source voltage
10
100
50 VGS
5
50
0 0
40
80
120
160
200
0 0
40
80
120
160
0 200
Case temperature Tc
(C)
Total gate charge Qg
(nC)
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Gate-source voltage
150
VGS (V)
2SK3176
rth - tw
3
Normalized transient thermal impedance rth/Rth (ch-c)
1 Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.05 0.02 Single pulse 0.01 0.01 0.005 0.003 10 100 1m 10 m 100 m PDM t T Duty = t/T Rth (ch-c) = 0.833C/W 1 10
Pulse width
tw
(s)
Safe Operating Area
300 ID max (pulse)* 1000
EAS - Tch
EAS (mJ) Avalanche energy
100
800
Drain current ID (A)
100 s* 50 30 1 ms* ID max (continuous)
600
10 5 3
400
DC operation Tc = 25C
200
1 0.5 *: Single nonrepetitive pulse Tc = 25C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 5 10 30 VDSS max 50 100 300 500
0 25
50
75
100
125
150
Channel temperature (initial) Tch
(C)
15 V -15 V
BVDSS IAR VDD VDS Wave form
Drain-source voltage
VDS (V)
Test circuit RG = 25 VDD = 50 V, L = 1.66 mH
1 2 B VDSS AS = *L*I * B 2 VDSS - VDD
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2SK3176
RESTRICTIONS ON PRODUCT USE
* Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. * Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. * Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. * The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.
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